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Standard Packaging Integrated Circuit Components SI2342DS-T1-GE3
Voltage - Test | 1070pF @ 4V |
---|---|
Voltage - Breakdown | SOT-23 |
Vgs(th) (Max) @ Id | 17 mOhm @ 7.2A, 4.5V |
Vgs (Max) | 1.2V, 4.5V |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® |
RoHS Status | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 6A (Tc) |
Polarization | TO-236-3, SC-59, SOT-23-3 |
Other Names | SI2342DS-T1-GE3-ND SI2342DS-T1-GE3TR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 24 Weeks |
Manufacturer Part Number | SI2342DS-T1-GE3 |
Input Capacitance (Ciss) (Max) @ Vds | 15.8nC @ 4.5V |
IGBT Type | ±5V |
Gate Charge (Qg) (Max) @ Vgs | 800mV @ 250µA |
FET Feature | N-Channel |
Expanded Description | N-Channel 8V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23 |
Drain to Source Voltage (Vdss) | - |
Description | MOSFET N-CH 8V 6A SOT-23 |
Current - Continuous Drain (Id) @ 25°C | 8V |
Capacitance Ratio | 1.3W (Ta), 2.5W (Tc) |