Label and body marking of PDTD123ES,126 can be provided after order.
In stock: 57437
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Standard Packaging Integrated Circuit Components PDTD123ES,126
Voltage - Collector Emitter Breakdown (Max) | 50V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Transistor Type | NPN - Pre-Biased |
Supplier Device Package | TO-92-3 |
Series | - |
Resistor - Emitter Base (R2) | 2.2 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 500mW |
Packaging | Tape & Box (TB) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Other Names | 934059143126 PDTD123ES AMO PDTD123ES AMO-ND |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 500mA |
Base Part Number | PDTD123 |