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Standard Packaging Integrated Circuit Components E3M0280090D
Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
---|---|
Vgs (Max) | +18V, -8V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247-3 |
Series | Automotive, AEC-Q101, E |
RoHS Status | RoHS Compliant |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 7.5A, 15V |
Power Dissipation (Max) | 54W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 600V |
Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 15V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Drain to Source Voltage (Vdss) | 900V |
Detailed Description | N-Channel 900V 11.5A (Tc) 54W (Tc) Through Hole TO-247-3 |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |