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Standard Packaging Integrated Circuit Components EMD4DXV6T1G
Voltage - Collector Emitter Breakdown (Max) | 50V |
---|---|
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Supplier Device Package | SOT-563 |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 47 kOhms, 10 kOhms |
Power - Max | 500mW |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-563, SOT-666 |
Other Names | EMD4DXV6T1G-ND EMD4DXV6T1GOSTR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 2 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | - |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |