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Standard Packaging Integrated Circuit Components IPI90R1K0C3XKSA1
Vgs(th) (Max) @ Id | 3.5V @ 370µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO262-3 |
Series | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 3.3A, 10V |
Power Dissipation (Max) | 89W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Other Names | IPI90R1K0C3 IPI90R1K0C3-ND SP000413722 SP000683078 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 900V |
Detailed Description | N-Channel 900V 5.7A (Tc) 89W (Tc) Through Hole PG-TO262-3 |
Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |