In stock: 57718
We are stocking distributor of C2M0045170D with very competitive price. Check out C2M0045170D newest pirce, inventory and lead time now by using the quick RFQ Form. Our commitment to quality and authenticity of C2M0045170D is unwavering, and we have implemented stringent quality inspection and delivery processes to ensure the integrity of C2M0045170D. You can also find C2M0045170D Datasheet here.
Standard Packaging Integrated Circuit Components C2M0045170D
Vgs(th) (Max) @ Id | 4V @ 18mA |
---|---|
Vgs (Max) | +25V, -10V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247-3 |
Series | C2M™ |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 50A, 20V |
Power Dissipation (Max) | 520W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | Not Applicable |
Manufacturer Standard Lead Time | 26 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 3672pF @ 1kV |
Gate Charge (Qg) (Max) @ Vgs | 188nC @ 20V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Drain to Source Voltage (Vdss) | 1700V |
Detailed Description | N-Channel 1700V 72A (Tc) 520W (Tc) Through Hole TO-247-3 |
Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |