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Standard Packaging Integrated Circuit Components C2M0080170P
Vgs(th) (Max) @ Id | 4V @ 10mA |
---|---|
Vgs (Max) | +25V, -10V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247-4L |
Series | C2M™ |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 28A, 20V |
Power Dissipation (Max) | 277W (Tc) |
Package / Case | TO-247-4 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | Not Applicable |
Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 1000V |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 20V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Drain to Source Voltage (Vdss) | 1700V |
Detailed Description | N-Channel 1700V 40A (Tc) 277W (Tc) Through Hole TO-247-4L |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |