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Standard Packaging Integrated Circuit Components C3M0065100K
Vgs(th) (Max) @ Id | 3.5V @ 5mA |
---|---|
Vgs (Max) | +19V, -8V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247-4L |
Series | C3M™ |
Rds On (Max) @ Id, Vgs | 78 mOhm @ 20A, 15V |
Power Dissipation (Max) | 113.5W (Tc) |
Packaging | Tube |
Package / Case | TO-247-4 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Moisture Sensitivity Level (MSL) | Not Applicable |
Manufacturer Standard Lead Time | 26 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 600V |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 15V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Drain to Source Voltage (Vdss) | 1000V |
Detailed Description | N-Channel 1000V 35A (Tc) 113.5W (Tc) TO-247-4L |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |