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Standard Packaging Integrated Circuit Components C3M0075120J
Vgs(th) (Max) @ Id | 4V @ 5mA |
---|---|
Vgs (Max) | +19V, -8V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | D2PAK-7 |
Series | C3M™ |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 20A, 15V |
Power Dissipation (Max) | 113.6W (Tc) |
Packaging | Bulk |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 26 Weeks |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 1000V |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 15V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Drain to Source Voltage (Vdss) | 1200V |
Detailed Description | N-Channel 1200V 30A (Tc) 113.6W (Tc) Surface Mount D2PAK-7 |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |