In stock: 56349
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Standard Packaging Integrated Circuit Components SCT2H12NYTB
Vgs(th) (Max) @ Id | 4V @ 410µA |
---|---|
Vgs (Max) | +22V, -6V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-268 |
Series | - |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.1A, 18V |
Power Dissipation (Max) | 44W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Other Names | SCT2H12NYTBCT |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800V |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 18V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Drain to Source Voltage (Vdss) | 1700V |
Detailed Description | N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268 |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |