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Standard Packaging Integrated Circuit Components SCT2280KEC
Vgs(th) (Max) @ Id | 4V @ 1.4mA |
---|---|
Vgs (Max) | +22V, -6V |
Technology | SiCFET (Silicon Carbide) |
Supplier Device Package | TO-247 |
Series | - |
Rds On (Max) @ Id, Vgs | 364 mOhm @ 4A, 18V |
Power Dissipation (Max) | 108W (Tc) |
Packaging | Tube |
Package / Case | TO-247-3 |
Other Names | SCT2280KECU |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 667pF @ 800V |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 18V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Drain to Source Voltage (Vdss) | 1200V |
Detailed Description | N-Channel 1200V 14A (Tc) 108W (Tc) Through Hole TO-247 |
Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |