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Standard Packaging Integrated Circuit Components SI6459BDQ-T1-GE3
Vgs(th) (Max) @ Id | 3V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-TSSOP |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 115 mOhm @ 2.7A, 10V |
Power Dissipation (Max) | 1W (Ta) |
Packaging | Tape & Reel (TR) |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Other Names | SI6459BDQ-T1-GE3TR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 60V |
Detailed Description | P-Channel 60V 2.2A (Ta) 1W (Ta) Surface Mount 8-TSSOP |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |