Label and body marking of SI6423DQ-T1-GE3 can be provided after order.
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Standard Packaging Integrated Circuit Components SI6423DQ-T1-GE3
Voltage - Test | - |
---|---|
Voltage - Breakdown | 8-TSSOP |
Vgs(th) (Max) @ Id | 8.5 mOhm @ 9.5A, 4.5V |
Vgs (Max) | 1.8V, 4.5V |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® |
RoHS Status | Digi-Reel® |
Rds On (Max) @ Id, Vgs | 8.2A (Ta) |
Polarization | 8-TSSOP (0.173", 4.40mm Width) |
Other Names | SI6423DQ-T1-GE3DKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 15 Weeks |
Manufacturer Part Number | SI6423DQ-T1-GE3 |
Input Capacitance (Ciss) (Max) @ Vds | 110nC @ 5V |
IGBT Type | ±8V |
Gate Charge (Qg) (Max) @ Vgs | 800mV @ 400µA |
FET Feature | P-Channel |
Expanded Description | P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP |
Drain to Source Voltage (Vdss) | - |
Description | MOSFET P-CH 12V 8.2A 8-TSSOP |
Current - Continuous Drain (Id) @ 25°C | 12V |
Capacitance Ratio | 1.05W (Ta) |