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Standard Packaging Integrated Circuit Components SI5855DC-T1-E3
Vgs(th) (Max) @ Id | 1V @ 250µA |
---|---|
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 1206-8 ChipFET™ |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 2.7A, 4.5V |
Power Dissipation (Max) | 1.1W (Ta) |
Packaging | Tape & Reel (TR) |
Package / Case | 8-SMD, Flat Lead |
Other Names | SI5855DC-T1-E3TR SI5855DCT1E3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
FET Type | P-Channel |
FET Feature | Schottky Diode (Isolated) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | P-Channel 20V 2.7A (Ta) 1.1W (Ta) Surface Mount 1206-8 ChipFET™ |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |