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Standard Packaging Integrated Circuit Components SIHG33N65E-GE3
Voltage - Test | 4040pF @ 100V |
---|---|
Voltage - Breakdown | TO-247AC |
Vgs(th) (Max) @ Id | 105 mOhm @ 16.5A, 10V |
Vgs (Max) | 10V |
Technology | MOSFET (Metal Oxide) |
Series | - |
RoHS Status | Digi-Reel® |
Rds On (Max) @ Id, Vgs | 32.4A (Tc) |
Polarization | TO-247-3 |
Other Names | SIHG33N65E-GE3DKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 20 Weeks |
Manufacturer Part Number | SIHG33N65E-GE3 |
Input Capacitance (Ciss) (Max) @ Vds | 173nC @ 10V |
IGBT Type | ±30V |
Gate Charge (Qg) (Max) @ Vgs | 4V @ 250µA |
FET Feature | N-Channel |
Expanded Description | N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC |
Drain to Source Voltage (Vdss) | - |
Description | MOSFET N-CH 650V 32.4A TO-247AC |
Current - Continuous Drain (Id) @ 25°C | 650V |
Capacitance Ratio | 313W (Tc) |