Label and body marking of SIHG33N60E-E3 can be provided after order.
In stock: 55868
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Standard Packaging Integrated Circuit Components SIHG33N60E-E3
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-247AC |
Series | E |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 16.5A, 10V |
Power Dissipation (Max) | 278W (Tc) |
Package / Case | TO-247-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 3508pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |