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Standard Packaging Integrated Circuit Components SIHD5N50D-GE3
Voltage - Test | 325pF @ 100V |
---|---|
Voltage - Breakdown | TO-252AA |
Vgs(th) (Max) @ Id | 1.5 Ohm @ 2.5A, 10V |
Technology | MOSFET (Metal Oxide) |
Series | - |
RoHS Status | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 5.3A (Tc) |
Polarization | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Other Names | SIHD5N50D-GE3TR SIHD5N50DGE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Part Number | SIHD5N50D-GE3 |
Input Capacitance (Ciss) (Max) @ Vds | 20nC @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 5V @ 250µA |
FET Feature | N-Channel |
Expanded Description | N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA |
Drain to Source Voltage (Vdss) | - |
Description | MOSFET N-CH 500V 5.3A TO252 DPK |
Current - Continuous Drain (Id) @ 25°C | 500V |
Capacitance Ratio | 104W (Tc) |