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Standard Packaging Integrated Circuit Components SIHD6N62ET1-GE3
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252AA |
Series | E |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3A, 10V |
Power Dissipation (Max) | 78W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Other Names | SIHD6N62ET1-GE3CT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 19 Weeks |
Input Capacitance (Ciss) (Max) @ Vds | 578pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 620V |
Detailed Description | N-Channel 620V 6A (Tc) 78W (Tc) Surface Mount TO-252AA |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |