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Standard Packaging Integrated Circuit Components IDH10G65C5ZXKSA1
Voltage - Peak Reverse (Max) | Silicon Carbide Schottky |
---|---|
Voltage - Forward (Vf) (Max) @ If | 10A (DC) |
Voltage - Breakdown | PG-TO220-2 |
Series | thinQ!™ |
Reverse Recovery Time (trr) | No Recovery Time > 500mA (Io) |
Resistance @ If, F | 300pF @ 1V, 1MHz |
Polarization | TO-220-2 |
Other Names | SP001128936 |
Operating Temperature - Junction | 0ns |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Part Number | IDH10G65C5ZXKSA1 |
Expanded Description | Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole PG-TO220-2 |
Diode Configuration | 180µA @ 650V |
Description | DIODE SCHOTTKY 650V 10A TO220-2 |
Current - Reverse Leakage @ Vr | 1.7V @ 10A |
Current - Average Rectified (Io) (per Diode) | 650V |
Capacitance @ Vr, F | -55°C ~ 175°C |