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Standard Packaging Integrated Circuit Components IDH09G65C5XKSA1
Voltage - Peak Reverse (Max) | Silicon Carbide Schottky |
---|---|
Voltage - Forward (Vf) (Max) @ If | 9A (DC) |
Voltage - Breakdown | PG-TO220-2 |
Series | thinQ!™ |
RoHS Status | Tube |
Reverse Recovery Time (trr) | No Recovery Time > 500mA (Io) |
Resistance @ If, F | 270pF @ 1V, 1MHz |
Polarization | TO-220-2 |
Other Names | IDH09G65C5 IDH09G65C5-ND SP000925206 |
Operating Temperature - Junction | 0ns |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Part Number | IDH09G65C5XKSA1 |
Expanded Description | Diode Silicon Carbide Schottky 650V 9A (DC) Through Hole PG-TO220-2 |
Diode Configuration | 310µA @ 650V |
Description | DIODE SCHOTTKY 650V 9A TO220-2 |
Current - Reverse Leakage @ Vr | 1.7V @ 9A |
Current - Average Rectified (Io) (per Diode) | 650V |
Capacitance @ Vr, F | -55°C ~ 175°C |