Label and body marking of IRF6811STR1PBF can be provided after order.
In stock: 50771
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Standard Packaging Integrated Circuit Components IRF6811STR1PBF
Vgs(th) (Max) @ Id | 2.1V @ 35µA |
---|---|
Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | DIRECTFET™ SQ |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 19A, 10V |
Power Dissipation (Max) | 2.1W (Ta), 32W (Tc) |
Packaging | Original-Reel® |
Package / Case | DirectFET™ Isometric SQ |
Other Names | IRF6811STR1PBFDKR |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1590pF @ 13V |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 25V |
Detailed Description | N-Channel 25V 19A (Ta), 74A (Tc) 2.1W (Ta), 32W (Tc) Surface Mount DIRECTFET™ SQ |
Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 74A (Tc) |