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Standard Packaging Integrated Circuit Components IRF6898MTR1PBF
Vgs(th) (Max) @ Id | 2.1V @ 100µA |
---|---|
Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | DIRECTFET™ MX |
Series | HEXFET® |
Rds On (Max) @ Id, Vgs | 1.1 mOhm @ 35A, 10V |
Power Dissipation (Max) | 2.1W (Ta), 78W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | DirectFET™ Isometric MX |
Other Names | IRF6898MTR1PBFCT |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 5435pF @ 13V |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 4.5V |
FET Type | N-Channel |
FET Feature | Schottky Diode (Body) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 25V |
Detailed Description | N-Channel 25V 35A (Ta), 213A (Tc) 2.1W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX |
Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 213A (Tc) |