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Standard Packaging Integrated Circuit Components STQ2LN60K3-AP
Vgs(th) (Max) @ Id | 4.5V @ 50µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-92-3 |
Series | SuperMESH3™ |
Rds On (Max) @ Id, Vgs | 4.5 Ohm @ 1A, 10V |
Power Dissipation (Max) | 2.5W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Other Names | 497-13391-1 |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 600mA (Tc) 2.5W (Tc) Through Hole TO-92-3 |
Current - Continuous Drain (Id) @ 25°C | 600mA (Tc) |