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Standard Packaging Integrated Circuit Components STQ1HNK60R-AP
Vgs(th) (Max) @ Id | 3.7V @ 250µA |
---|---|
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-92-3 |
Series | SuperMESH™ |
Rds On (Max) @ Id, Vgs | 8.5 Ohm @ 500mA, 10V |
Power Dissipation (Max) | 3W (Tc) |
Packaging | Tape & Box (TB) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Other Names | 497-15648-3 STQ1HNK60R-AP-ND |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 38 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 156pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3 |
Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |