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Standard Packaging Integrated Circuit Components SI7898DP-T1-GE3
Vgs(th) (Max) @ Id | 4V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® SO-8 |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 3.5A, 10V |
Power Dissipation (Max) | 1.9W (Ta) |
Packaging | Cut Tape (CT) |
Package / Case | PowerPAK® SO-8 |
Other Names | SI7898DP-T1-GE3CT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 150V |
Detailed Description | N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |