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Standard Packaging Integrated Circuit Components EPC2012
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
---|---|
Vgs (Max) | +6V, -5V |
Technology | GaNFET (Gallium Nitride) |
Supplier Device Package | Die |
Series | eGaN® |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 3A, 5V |
Power Dissipation (Max) | - |
Packaging | Original-Reel® |
Package / Case | Die |
Other Names | 917-1017-6 |
Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 145pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Drain to Source Voltage (Vdss) | 200V |
Detailed Description | N-Channel 200V 3A (Ta) Surface Mount Die |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |