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Standard Packaging Integrated Circuit Components SIE820DF-T1-E3
Vgs(th) (Max) @ Id | 2V @ 250µA |
---|---|
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 10-PolarPAK® (S) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 18A, 4.5V |
Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | 10-PolarPAK® (S) |
Other Names | SIE820DF-T1-E3CT SIE820DFT1E3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 4300pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 143nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S) |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |