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Standard Packaging Integrated Circuit Components SIE816DF-T1-GE3
Vgs(th) (Max) @ Id | 4.4V @ 250µA |
---|---|
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 10-PolarPAK® (L) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 7.4 mOhm @ 19.8A, 10V |
Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | 10-PolarPAK® (L) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 60V |
Detailed Description | N-Channel 60V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L) |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |