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Standard Packaging Integrated Circuit Components SIE812DF-T1-E3
Voltage - Test | 8300pF @ 20V |
---|---|
Voltage - Breakdown | 10-PolarPAK® (L) |
Vgs(th) (Max) @ Id | 2.6 mOhm @ 25A, 10V |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® |
RoHS Status | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 60A (Tc) |
Polarization | 10-PolarPAK® (L) |
Other Names | SIE812DF-T1-E3TR SIE812DFT1E3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 24 Weeks |
Manufacturer Part Number | SIE812DF-T1-E3 |
Input Capacitance (Ciss) (Max) @ Vds | 170nC @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 3V @ 250µA |
FET Feature | N-Channel |
Expanded Description | N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L) |
Drain to Source Voltage (Vdss) | - |
Description | MOSFET N-CH 40V 60A 10-POLARPAK |
Current - Continuous Drain (Id) @ 25°C | 40V |
Capacitance Ratio | 5.2W (Ta), 125W (Tc) |